CIRCUITO INTEGRADO JAPONES

MOSFET, N, 900V, TO-220SIS
Transistor Polarity: N Channel
Continuous Drain Current Id: 2.5A
Drain Source Voltage Vds: 900V
On Resistance Rds(on): 6.4ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs Typ: 4V
Power Dissipation Pd: 40W
Transistor Case Style: TO-220SIS
No. of Pins: 3
Current Id Max: 2.5A
Package / Case: TO-220SIS
Power Dissipation Pd: 40W
Power Dissipation Pd: 40W
Pulse Current Idm: 7.5A
Termination Type: Through Hole
Voltage Vds Typ: 900V
Voltage Vgs Max: 30V
Voltage Vgs Rds on Measurement: 10V